Numéro d'article RQ3G110ATTB Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3G110ATTB La description MOSFET Pch -40V -35A, HSMT8, Power MOSFET. RQ3G110AT is a power MOSFET, suitable for load switching applications.
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 35 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 20 W Qg - Gate Charge 46 nC Rds On - Drain-Source Resistance 12.4 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V