Numéro d'article RQ3G150GNTB Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3G150GNTB La description MOSFET Nch 40V 30Aw Si MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 20 W Qg - Gate Charge 24.1 nC Rds On - Drain-Source Resistance 5.1 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V