Numéro d'article RQ3G100GNTB Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3G100GNTB La description MOSFET Nch 40V 10A Power MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 8.4 nC Rds On - Drain-Source Resistance 11 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V