Numéro d'article RQ1E075XNTCR Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ1E075XNTCR La description MOSFET 4V N-CHANNEL DRIVE
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 6.8 nC Rds On - Drain-Source Resistance 17 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V