Numéro d'article RQ1A070ZPTR Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ1A070ZPTR La description MOSFET SW MOSFET MID PWR P-CH 12V -7A
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 58 nC Rds On - Drain-Source Resistance 12 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 1 V