Numéro d'article RQ1A060ZPTR Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ1A060ZPTR La description MOSFET RECOMMENDED ALT 755-RF4C050APTR
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 34 nC Rds On - Drain-Source Resistance 16 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 1 V