Numéro d'article R8002ANJFRGTL Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique R8002ANJFRGTL La description MOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTS
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 62 W Qg - Gate Charge 13 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 4.3 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V