Numéro d'article R8001CND3FRATL Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique R8001CND3FRATL La description MOSFET 800V N-CH 1A POWER
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3/2 Packaging Cut Tape, Reel Pd - Power Dissipation 36 W Qg - Gate Charge 7.2 nC Rds On - Drain-Source Resistance 8.7 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5.5 V