Numéro d'article RQ3P300BHTB1 Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3P300BHTB1 La description MOSFET Nch 100V 39A, HSMT8, Power MOSFET. RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching.
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 39 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Reel Pd - Power Dissipation 32 W Qg - Gate Charge 18 nC Rds On - Drain-Source Resistance 15.5 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 4 V