Numéro d'article RQ3E150MNTB1 Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3E150MNTB1 La description MOSFET 4.5V Drive Nch MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Id - Continuous Drain Current 15 A Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 20 nC Rds On - Drain-Source Resistance 4.8 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V