Numéro d'article R8011KNXC7G Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique R8011KNXC7G La description MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FM-3 Packaging Tube Pd - Power Dissipation 65 W Qg - Gate Charge 37 nC Rds On - Drain-Source Resistance 450 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 20 V, 30 V Vgs th - Gate-Source Threshold Voltage 4.5 V