Numéro d'article RQ3E180AJTB Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3E180AJTB La description MOSFET Nch 30V 18A Middle Power MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 18 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 30 W Qg - Gate Charge 39 nC Rds On - Drain-Source Resistance 3.5 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV