Numéro d'article RU1C002ZPTCL Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RU1C002ZPTCL La description MOSFET 4V Drive Pch MOSFET Drive Pch
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-323-3 Packaging Cut Tape, Reel Pd - Power Dissipation 150 mW Qg - Gate Charge 1.4 nC Rds On - Drain-Source Resistance 1.2 Ohms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 300 mV