Numéro d'article RQ3E160ADTB Fabricant ROHM Semiconductor Les catégories MOSFET RoHS Fiche technique RQ3E160ADTB La description MOSFET Nch 30V 16A Middle Power MOSFET
Fabricant ROHM Semiconductor Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 16 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 51 nC Rds On - Drain-Source Resistance 3.5 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V