Numéro d'article FQA32N20C Fabricant onsemi / Fairchild Les catégories MOSFET RoHS Fiche technique FQA32N20C La description MOSFET 200V N-Channel Advance Q-FET
Fabricant onsemi / Fairchild Les catégories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 32 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 204 W Qg - Gate Charge 110 nC Rds On - Drain-Source Resistance 82 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V