Numéro d'article GB100XCP12-227 Fabricant GeneSiC Semiconductor Les catégories IGBT Modules RoHS Fiche technique GB100XCP12-227 La description IGBT Modules 1200V 100A SIC IGBT CoPak
Fabricant GeneSiC Semiconductor Les catégories IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.9 V Configuration IGBT-Inverter Gate-Emitter Leakage Current 400 nA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Package / Case SOT-227 Packaging Bulk Product IGBT Silicon Carbide Modules