Numéro d'article HN1A01F-Y(TE85L,F) Fabricant Toshiba Les catégories Bipolar Transistors - BJT RoHS Fiche technique HN1A01F-Y(TE85L,F) La description Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A
Fabricant Toshiba Les catégories Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.1 V Configuration Dual Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-26-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 300 mW Series HN1A01 Transistor Polarity PNP