HN1A01F-Y(TE85L,F)

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Numéro d'article
HN1A01F-Y(TE85L,F)
Fabricant
Toshiba
Les catégories
Bipolar Transistors - BJT
RoHS
Fiche technique
La description
Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A

Caractéristiques

Fabricant
Toshiba
Les catégories
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-26-6
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
300 mW
Series
HN1A01
Transistor Polarity
PNP

Dernières critiques

packed pretty good, all is ok,-seller.

Fast shippng. Good quality. I recomend this seller.

The goods are OK, thank you dealers.

The timer is running. 10 PCS. Packed properly.

Seems well have not tested

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