Numéro d'article UM2222AU3HZGT106 Fabricant ROHM Semiconductor Les catégories Bipolar Transistors - BJT RoHS Fiche technique UM2222AU3HZGT106 La description Bipolar Transistors - BJT TRANS MED PWR
Fabricant ROHM Semiconductor Les catégories Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector-Emitter Saturation Voltage 2 V Configuration Single Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current 600 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case SOT-323-3 Packaging Cut Tape, Reel Pd - Power Dissipation 200 mW Qualification AEC-Q101 Transistor Polarity NPN